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vishay siliconix dg211b, dg212b document number: 70040 s11-0179-rev. j, 07-feb-11 www.vishay.com 1 improved quad cmos analog switches features ? 22 v supply voltage rating ? ttl and cmos compatible logic ? low on-resistance - r ds(on) : 50 ? ? low leakage - i d(on) : 20 pa ? single supply operation possible ? extended temperature range ? fast switching - t on : 120 ns ? low charge injection - q: 1 pc benefits ? wide analog signal range ? simple logic interface ? higher accuracy ? minimum transients ? reduced power consumption ? superior to dg211, dg212 ? space savings (tssop) applications ? industrial instrumentation ? test equipment ? communications systems ? disk drives ? computer peripherals ? portable instruments ? sample-and-hold circuits description the dg211b, dg212b analog s witches are highly improved versions of the industry-s tandard dg211, dg212. these devices are fabricated in vishay siliconix? proprietary silicon gate cmos process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. these quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. an improved charge injection compensation design minimizes switching transie nts. the dg211b and dg212b can handle up to 22 v, and have an improved continuous current rating of 30 ma. an epitaxial layer prevents latchup. all devices feature true bi-dir ectional performance in the on condition, and will block signals to the supply levels in the off condition. the dg211b is a normally cl osed switch and the dg212b is a normally open switch. (see truth table.) functional block diagram and pin configuration logic ?0? ?? 0.8 v logic ?1? ?? 2.4 v * pb containing terminations are not rohs compliant, exemptions may apply. in 1 in 2 d 1 d 2 s 1 s 2 v- v+ gnd v l s 4 s 3 d 4 d 3 in 4 in 3 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 top view dg211b dual-in-line, soic and tssop truth table logic dg211b dg212b 0 on off 1offon
www.vishay.com 2 document number: 70040 s11-0179-rev. j, 07-feb-11 vishay siliconix dg211b, dg212b notes: a. signals on s x , d x , or in x exceeding v+ or v- will be clamped by internal diodes . limit forward diode current to maximum current ratings. b. all leads welded or soldered to pc board. c. derate 6.5 mw/c above 75 c. d. derate 7.6 mw/c above 75 c. schematic diagram (typical channel) ordering information temp. range package standard part number lead (pb)-free part number - 40 c to 85 c 16-pin plastic dip dg211bdj dg211bdj-e3 dg212bdj dg212bdj-e3 16-pin narrow soic dg211bdy dg211bdy-t1 dg211bdy-e3 dg211bdy-t1-e3 dg212bdy dg212bdy-t1 dg212bdy-e3 dg212bdy-t1-e3 16-pin tssop dg211bdq dg211bdq-t1 DG211BDQ-E3 dg211bdq-t1-e3 dg212bdq dg212bdq-t1 dg212bdq-e3 dg212bdq-t1-e3 absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter limit unit voltages referenced, v+ to v- 44 v gnd 25 digital inputs a , v s , v d (v-) - 2 to (v+) + 2 or 30 ma, whichever occurs first current (any terminal) 30 ma peak current, s or d (pulsed at 1 ms, 10 % duty cycle max.) 100 storage temperature - 65 to 125 c power dissipation (package) b 16-pin plastic dip c 470 mw 16-pin narrow soic and tssop d 640 figure 1. d x s x v+ in x v- level shift/ gnd v+ v- drive v l
document number: 70040 s11-0179-rev. j, 07-feb-11 www.vishay.com 3 vishay siliconix dg211b, dg212b specifications parameter symbol test conditions unless otherwise specified v+ = 15 v, v- = - 15 v v l = 5 v, v in = 2.4 v, 0.8 v e temp. a d suffix - 40 c to 85 c unit min. b typ. c max. b analog switch analog signal range d v analog full - 15 15 v drain-source on-resistance r ds(on) v d = 10 v, i s = 1 ma room full 45 85 100 ? r ds(on) match ? r ds(on) room 2 source off leakage current i s(off) v s = 14 v, v d = 14 v room full - 0.5 - 5 0.01 0.5 5 na drain off leakage current i d(off) v d = 14 v, v s = 14 v room full - 0.5 - 5 0.01 0.5 5 drain on leakage current i d(on) v s = v d = 14 v room full - 0.5 - 10 0.02 0.5 10 digital control input voltage high v inh full 2.4 v input voltage low v inl full 0.8 input current i inh or i inl v inh or v inl full - 1 1 a input capacitance c in room 5 pf dynamic characteristics tu r n - o n t i m e t on v s = 10 v see figure 2 room 300 ns turn-off time t off room 200 charge injection q c l = 1000 pf, v gen = 0 v, r gen = 0 ? room 1 pc source-off capacitance c s(off) v s = 0 v, f = 1 mhz room 5 pf drain-off capacitance c d(off) room 5 channel-on capacitance c d(on) v d = v s = 0 v, f = 1 mhz room 16 off isolation oirr c l = 15 pf, r l = 50 ??? v s = 1 v rms , f = 100 khz room 90 db channel-to-channel crosstalk x ta l k room 95 power supply positive supply current i+ v in = 0 or 5 v room full 10 50 a negative supply current i- room full - 10 - 50 logic supply current i l room full 10 50 power supply range for continuous operation v op full 4.5 22 v
www.vishay.com 4 document number: 70040 s11-0179-rev. j, 07-feb-11 vishay siliconix dg211b, dg212b notes: a. room = 25 c, full = as determined by the operating temperature suffix. b. the algebraic convention whereby the most negative value is a minimum and the most pos itive a maximum, is used in this data sheet. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. guaranteed by design, not subject to production test. e. v in = input voltage to perform proper function. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics (t a = 25 c, unless otherwise noted) specifications (for single supply) parameter symbol test conditions unless otherwise specified v+ = 12 v, v- = 0 v v l = 5 v, v in = 2.4 v, 0.8 v e temp. a d suffix - 40 c to 85 c unit min. b typ. c max. b analog switch analog signal range d v analog full 0 12 v drain-source on-resistance r ds(on) v d = 3 v, 8 v, i s = 1 ma room full 90 160 200 ? dynamic characteristics tu r n - o n t i m e t on v s = 8 v see figure 1 room 300 ns tu r n - o f f t i m e t off room 200 charge injection q c l = 1 nf, v gen = 6 v, r gen = 0 ? room 4 pc power supply positive supply current i+ v in = 0 or 5 v room full 10 50 a negative supply current i- room full - 10 - 50 logic supply current i l room full 10 50 power supply range for continuous operation v op full + 4.5 + 25 v r ds(on) vs. v d and power supply voltages - 20 - 16 - 12 - 8 - 4 0 4 8 1 2 1 6 2 0 40 50 60 70 80 90 100 11 0 5 v v d - drain voltage (v) 10 v 15 v 20 v 30 20 10 r ds(on) - drain-source on-resistance ( ) r ds(on) vs. v d and temperature 85 c 0 10 20 30 40 50 - 15 - 10 - 5 0 5 10 15 v d - drain v oltage (v) 125 c 25 c - 55 c v+ = 15 v v- = - 15 v 60 70 80 90 100 r ds(on) - drain-source on-resistance ( )
document number: 70040 s11-0179-rev. j, 07-feb-11 www.vishay.com 5 vishay siliconix dg211b, dg212b typical characteristics (t a = 25 c, unless otherwise noted) r ds(on) vs. v d and single power supply voltages leakage current vs. temperature 02468 1 0 1 2 1 4 16 0 25 50 75 100 125 150 175 200 225 v d - drain v oltage (v) v+ = 5 v 7 v 10 v 12 v 15 v 250 r ds(on) - drain-source on-resistance ( ) - 55 25 45 5 - 15 65 1 na 100 pa 10 pa - 35 1 pa 85 105 125 v+ = 15 v v- = - 15 v v s, v d = 14 v i s( of f) , i d(of f) i s, i d - current temperature (c) leakage currents vs. analog voltage q s , q d - charge injection vs. analog voltage - 20 - 15 - 10 - 5 0 5 10 15 20 40 20 0 - 20 - 40 i s, i d - current (pa) i s( of f) , i d(of f) i d(on) v analo g - analog v oltage (v) v+ = 22 v v- = - 22 v t a = 25 c 30 10 - 10 - 30 - 15 - 10 - 5 0 5 10 15 30 20 10 0 - 10 - 20 - 30 v+ = 15 v v- = - 15 v v+ = 12 v v- = 0 v q - charge (pc) v analog - analog voltage (v) off isolation vs. frequency oirr (db) 10k 100k 1m 10m 40 50 60 70 80 90 100 11 0 120 f - frequency (hz) v+ = + 15 v v- = - 15 v r l = 50
www.vishay.com 6 document number: 70040 s11-0179-rev. j, 07-feb-11 vishay siliconix dg211b, dg212b test circuits figure 2. switching time 50 % 0 v 3 v t off t on v o t r < 20 ns t f < 20 ns logic input switch output 90 % c l 35 pf r l 1 k v o = v s r l + r ds(on) r l v s = + 2 v v o v- v+ in s d 3 v - 15 v gnd + 15 v figure 3. off isolation s in r l d r g = 50 v s v o 0v, 2.4 v off isolation = 20 log v s v o v+ - 15 v gnd v- c c + 15 v figure 4. channel-to-channel crosstalk in 1 v o + 15 v - 15 v gnd r l v+ v- nc x talk isolation = 20 log c v s c v o 0 v, 2.4 v 50 v s s 1 in 2 s 2 r g = 50 d 1 d 2 c = rf bypass 0 v, 2.4 v figure 5. charge injection c l 1000 pf v g 3 v d v+ v- r g - 15 v gnd in s v o + 15 v v o v o in x on on off v o = measured voltage error due to charge injection the charge injection in coulombs is q = c l x v o
document number: 70040 s11-0179-rev. j, 07-feb-11 www.vishay.com 7 vishay siliconix dg211b, dg212b applications figure 6. sample-and-hold lm101a + 15 v - 15 v 30 pf + 15 v - 15 v v- dg21 1b 50 pf 1000 pf j202 j500 j507 + 15 v 2n4400 - 15 v v in v out 1 k 200 w 5 m 5.1 m aquisition t ime = 25 s aperature t ime = 1 s sample to hold of fset = 5 mv droop rate = 5 mv/s logic input low = sample high = hold - + v l v+ + 5 v figure 7. active low pass filter with digitally selected break frequency f c1 f c2 ttl control 150 pf 1500 pf + 15 v dg21 1b gnd 30 pf lm101a + 15 v - 15 v frequency - hz 1 10 100 1k 10k 100k 1m - 40 0 160 120 80 v oltage gain - db f c4 select f c3 select f c2 select f c1 select r 1 = 10 k r 2 = 10 k r 3 = 1 m v out v 1 v- c 4 c 3 c 2 c 1 f c4 0.015 f 0.15 f - 15 v - + f c3 40 a l (voltage gain below break frequency) = = 100 (40 db) r 3 r 1 f c (break frequency) = 1 2 r 3 c x 1 2 r 1 c x f l (unity gain frequency) = max. attenuation = r ds(on) 10 k - 47 db f l1 f l2 f l3 f l4
www.vishay.com 8 document number: 70040 s11-0179-rev. j, 07-feb-11 vishay siliconix dg211b, dg212b applications vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70040 . figure 8. a precision amplifier with digitally programable input and gains gain = gain 1 (x1) gain 2 (x10) gain 3 (x100) gain 4 (x1000) - 15 v + 15 v - 15 v gnd dg419 30 pf + 15 v + 15 v - 15 v dg212b logic high = switch on + - lm101a r f + r g r g v in1 v in2 ch r f1 18 k r f2 9.9 k r f3 100 k r g3 100 r g2 100 r g1 2 k v+ v- gnd v- + 5 v v l
all leads 0.101 mm 0.004 in e h c d e b a1 l 4 3 12 8 7 56 13 14 16 15 9 10 12 11 package information vishay siliconix document number: 71194 02-jul-01 www.vishay.com 1
jedec part number: ms-012 dim min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.38 0.51 0.015 0.020 c 0.18 0.23 0.007 0.009 d 9.80 10.00 0.385 0.393 e 3.80 4.00 0.149 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 l 0.50 0.93 0.020 0.037 0 8 0 8 ecn: s-03946?rev. f, 09-jul-01 dwg: 5300
e 1 e q 1 a l a 1 e 1 b b 1 s c e a d 15 max 12345678 16 15 14 13 12 11 10 9 package information vishay siliconix document number: 71261 06-jul-01 www.vishay.com 1

dim min max min max a 3.81 5.08 0.150 0.200 a 1 0.38 1.27 0.015 0.050 b 0.38 0.51 0.015 0.020 b 1 0.89 1.65 0.035 0.065 c 0.20 0.30 0.008 0.012 d 18.93 21.33 0.745 0.840 e 7.62 8.26 0.300 0.325 e 1 5.59 7.11 0.220 0.280 e 1 2.29 2.79 0.090 0.110 e a 7.37 7.87 0.290 0.310 l 2.79 3.81 0.110 0.150 q 1 1.27 2.03 0.050 0.080 s 0.38 1.52 .015 0.060 ecn: s-03946?rev. d, 09-jul-01 dwg: 5482
vishay siliconix package information document number: 74417 23-oct-06 www.vishay.com 1 symbols dimensions in millimeters min nom max a - 1.10 1.20 a1 0.05 0.10 0.15 a2 - 1.00 1.05 b 0.22 0.28 0.38 c - 0.127 - d 4.90 5.00 5.10 e 6.10 6.40 6.70 e1 4.30 4.40 4.50 e-0.65- l 0.50 0.60 0.70 l1 0.90 1.00 1.10 y--0.10 1036 ecn: s-61920-rev. d, 23-oct-06 dwg: 5624 tssop: 16-lead
pad pattern www.vishay.com vishay siliconix revision: 02-sep-11 1 document number: 63550 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 recommended minimum pad for tssop-16 0.281 (7.15) recommended minimum pads dimensions in inches (mm) 0.171 (4.35) 0.055 (1.40) 0.012 (0.30) 0.026 (0.65) 0.014 (0.35) 0.193 (4.90)
application note 826 vishay siliconix www.vishay.com document number: 72608 24 revision: 21-jan-08 application note recommended minimum pads for so-16 recommended minimum pads for so-16 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) 0.372 (9.449) return to index return to index
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.

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